The MB85R2001 is 2 Mbit Ferroelectric Random Access Memory (FRAM) chip packaged on a 48-pin plastic TSOP and operating at a temperature range of -20°C to +85°C. It has 10 years of data retention and ...
Practically since its founding over eight years ago, Automation World has covered the technology and applications of the connected world, now dubbed the “Internet of Things.” The most recent example ...
Researchers from Cambridge University's Microelectronics Research Centre and Hitachi Cambridge Laboratory made progress on building a single-electron memory in CMOS. The group has put together a 3 X 3 ...
The AEFuse embedded, nonvolatile memory cores include what is said to be the first multiple-times-programmable (MTP) fuse fabricated in standard 0.25 µm and 0.18 µm CMOS processes. Offered as a ...
Researchers achieve the first complete 2D flash chip, which can be programmed in 20 nanoseconds with minimal energy ...
Researchers have announced the demonstration of high-speed spin-orbit-torque magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. Researchers at Tohoku University have ...
A 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+), dubbed the SST38VF6401B by Microchip, takes advantage of the company’s CMOS SuperFlash technology—a split-gate cell design and ...
For the First Time, Applications Requiring High Density Logic NVM on Advanced Semiconductor Processes Have an Embedded NVM Solution SANTA CLARA, CA--Jul 24, 2007-- Kilopass Technology Inc., the ...
A technical paper titled “CMOS-based Single-Cycle In-Memory XOR/XNOR” was published by researchers at University of Tennessee, University of Virginia, and Oak Ridge National Laboratory (ORNL). “Big ...
Researchers at Tohoku University have announced the demonstration of high-speed spin-orbit-torque (SOT) magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. The demand ...