Navitas Semiconductor has announced a new level of reliability for its SiC MOSFETs to meet the requirements of the most demanding automotive and industrial applications. These new ‘AEC-Plus’ 650-V and ...
The development of wide bandgap silicon carbide (SiC) compound semiconductors has proved to be extremely beneficial for power conversion applications. Capable of switching at significantly higher ...
MALVERN, Pa., Dec. 03, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced two new 1200 V MOSFET power modules designed to increase efficiency and reliability for medium ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...
TORRANCE, Calif., May 05, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (NVTS) (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride ...
Compared to traditional silicon, power MOSFETs based on silicon carbide (SiC) can handle higher voltages with lower on-resistance (R DS(on)) and superior thermal conductivity, opening the door to ...
Navitas Semiconductor has announced the launch of its new SiCPAK™ power modules, which utilize innovative epoxy-resin potting technology alongside proprietary trench-assisted planar SiC MOSFET ...
Microchip Technology Inc. has expanded its silicon carbide (SiC) portfolio with the introduction of 3.3-kV SiC MOSFETs and SiC Schottky barrier diodes (SBC), claiming the industry’s lowest ...
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