Navitas Semiconductor has announced a new level of reliability for its SiC MOSFETs to meet the requirements of the most demanding automotive and industrial applications. These new ‘AEC-Plus’ 650-V and ...
When it comes to reliability research on SiC power devices, The Ohio State University (OSU) has been at the vanguard. Several aspects of the SiC power MOSFET reliability, including threshold voltage ...
MALVERN, Pa., Dec. 03, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced two new 1200 V MOSFET power modules designed to increase efficiency and reliability for medium ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction ...
This December, Sheryl Miles at Electronic Specifier takes a look at the top 5 power products released in December 2025.
TORRANCE, Calif., May 05, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (NVTS) (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride ...
The "Silicon Carbide (SiC) Patent Landscape 2024" report has been added to ResearchAndMarkets.com's offering. The first section of the Silicon Carbide (SiC) Patent Landscape report 2024 describes the ...
Compared to traditional silicon, power MOSFETs based on silicon carbide (SiC) can handle higher voltages with lower on-resistance (R DS(on)) and superior thermal conductivity, opening the door to ...
Automotive supplier Schaeffler has started mass production of a new high-voltage inverter brick equipped with ROHM’s silicon-carbide (SiC) MOSFET bare chips as part of its strategic partnership. The ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback