KAWASAKI, Japan, November 12, 2024--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for ...
In switched-mode power supplies (SMPS), magnetic components, namely inductors and transformers, play critical roles. Much of the SMPS design process relies on component specifications and simulation ...
Infineon has brought out an evaluation kit for double pulse testing of the switching behaviour of powerdrive options for the 1200V CoolSiC MOSFET in TO247 3-pin and 4-pin packages. The motherboard of ...
Cree Inc., a maker of silicon carbide (SiC) power devices, has introduced a new Cree MOSFET design kit that includes all of the components needed to evaluate Cree MOSFET and Schottky diode performance ...
Toshiba Electronics Europe has launched the TPH2R70AR5, a new 100V-rated N-channel power MOSFET. The TPH2R70AR5 is a 100V-rated N-channel power MOSFET Credit: Toshiba Electronics Europe The device has ...
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