IEEE

Study of Drain Access Resistance in Saturation Region of AlGaN/GaN Heterostructure Field-Effect Transistors

Abstract: A method is proposed to determine drain access resistance in saturation region of AlGaN/GaN heterostructure field-effect transistors (HFETs). The variation of drain access resistance is ...
The Cool Down on MSN

Homeowner demonstrates simple method to unclog sink drains: 'It's been that easy?'

"Thank you for posting." Homeowner demonstrates simple method to unclog sink drains: 'It's been that easy?' first appeared on ...
IEEE

DC Performance Variations by Grain Boundary in Source/Drain Epitaxy of Sub-3-nm Nanosheet Field-Effect Transistors

Abstract: Grain boundary (GB) at the source/drain (S/D) epitaxy was investigated using fully-calibrated TCAD. Because the S/D epi is grown separately at the bottom and the NS channels, nanosheet field ...