The gate current is programmable, helping engineers minimize MOSFET switching noise to meet electromagnetic compatibility ...
Abstract: This article reports an investigation into the impact of P+ body design in 4H-silicon carbide (SiC) MOSFETs. Specifically, 1.2 kV SiC MOSFETs with various P+ body designs were fabricated and ...
Abstract: A p-type ternary logic MOSFET (P-TMOS), which serves as the counterpart to a previously reported n-type ternary logic MOSFET (N-TMOS) but has been missing for the construction of a ...
The PMO Convergence 2025, hosted by PMaspire Global Group in collaboration with PMO Global Institute Inc, brought together 120+ PMO leaders, executives, and innovators from across industries from 80+ ...
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