Abstract: This work investigates the proton irradiation effect on a kV-class vertical GaN-on-GaN PiN diode under 10-MeV and 50-MeV proton irradiation with fluence up to $1\times 10^{{14}}$ cm−2. After ...
Abstract: A novel self-enhanced unclamped-inductive-switching (UIS) behavior of high-voltage p-gallium nitride (GaN) gate high-electron-mobility transistor (HEMT) on sapphire substrate ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback