As for those digital-to-analog conversions, the A8 Apex and A10 Apex use the same “high-quality” DAC (ESS9018). While the ...
A team of scientists at the University of Chicago and Argonne National Laboratory have created an ultrathin transistor unlike ...
Carbon nanotubes (CNTs), cylindrical nanostructures made of carbon atoms arranged in a hexagonal lattice, have proved to be ...
To meet the growing demands of flexible and wearable electronic systems, such as smart watches and biomedical sensors, ...
The microchips must become more stable at higher temperatures and adapted for large-scale manufacturing before they can enter ...
Supporting the theme “100 Years of FETs: Shaping the Future of Device Innovations,” the 2025 IEDM technical program will consist of 295 presentations, plus a host of events that include Focus Sessions ...
Back in 1966, a suitable toy for a geeky kid was a radio kit. You could find simple crystal radio sets or some more advanced ...
Researchers from TU Wien, Johannes Kepler University Linz, and TU Bergakademie Freiberg manufactured a silicon-germanium (SiGe) transistor using an alternative approach that involves doping the ...
NCERT Physics Course for 12th Students: Many learners struggle with physics concepts and often look for an instructor who can simplify the material. If you are a 12th-grade student enrolled in physics ...
Abstract: This article describes the recent advances in very high-power transistors and amplifiers for applications above 1MHz. It focuses primarily on GaN-on-SiC HEMT devices for pulsed applications.
Some results have been hidden because they may be inaccessible to you
Show inaccessible results